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    Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

    New search for: Lu, X.
    New search for: Ishiwara, H.
    New search for: Maruyama, K.

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    Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

    New search for: Lu, X.
    New search for: Ishiwara, H.
    New search for: Maruyama, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

    New search for: Lu, X.
    New search for: Ishiwara, H.
    New search for: Maruyama, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

    Contributors:

    Lu, X. (author) / Ishiwara, H. (author) / Maruyama, K. (author)

    Published in:

    JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 23 ; 2727-2732

    Publication date:

    2008-01-01

    Size:

    6 pages

    ISSN:

    0884-2914

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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