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Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness
Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness
Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness
Lu, X. (Autor:in) / Ishiwara, H. (Autor:in) / Maruyama, K. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 23 ; 2727-2732
01.01.2008
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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