Influence of Ge content on formation of radiation defects in Si1-xGex solid solutions: Fid-Bau Portal

Influence of Ge content on formation of radiation defects in Si1-xGex solid solutions

Atabaev, I. G. / Matchanov, N. A. / Yusupov, A. / Saidov, D. S. / Saidov, M. S.

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Influence of Ge content on formation of radiation defects in Si1-xGex solid solutions

Atabaev, I. G. / Matchanov, N. A. / Yusupov, A. / Saidov, D. S. / Saidov, M. S.

Influence of Ge content on formation of radiation defects in Si1-xGex solid solutions

Atabaev, I. G. / Matchanov, N. A. / Yusupov, A. / Saidov, D. S. / Saidov, M. S.

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Check availability in my library

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Document information

Title:

Influence of Ge content on formation of radiation defects in Si1-xGex solid solutions

Contributors:

Atabaev, I. G. (author) / Matchanov, N. A. (author) / Yusupov, A. (author) / Saidov, D. S. (author) / Saidov, M. S. (author)

Published in:

COMPUTATIONAL MATERIALS SCIENCE ; 44 ; 832-834

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0927-0256

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1 / 510

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