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    Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method

    New search for: Dubois, C.
    New search for: Prudon, G.
    New search for: Gautier, B.
    New search for: Dupuy, J. C.

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    Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method

    New search for: Dubois, C.
    New search for: Prudon, G.
    New search for: Gautier, B.
    New search for: Dupuy, J. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method

    New search for: Dubois, C.
    New search for: Prudon, G.
    New search for: Gautier, B.
    New search for: Dupuy, J. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Quantitative SIMS measurement of high concentration of boron in silicon (up to 20at.%) using an isotopic comparative method

    Contributors:

    Dubois, C. (author) / Prudon, G. (author) / Gautier, B. (author) / Dupuy, J. C. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 255 ; 1377-1380

    Publication date:

    2008-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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