Application of TOF-SIMS for high precision ion implant dosimetry: Possibilities and limitations: Fid-Bau Portal

Application of TOF-SIMS for high precision ion implant dosimetry: Possibilities and limitations

Grehl, T. / Mollers, R. / Niehuis, E. / Rading, D.

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Application of TOF-SIMS for high precision ion implant dosimetry: Possibilities and limitations

Grehl, T. / Mollers, R. / Niehuis, E. / Rading, D.

Application of TOF-SIMS for high precision ion implant dosimetry: Possibilities and limitations

Grehl, T. / Mollers, R. / Niehuis, E. / Rading, D.

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Check availability in my library

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Document information

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Document information

Title:

Application of TOF-SIMS for high precision ion implant dosimetry: Possibilities and limitations

Contributors:

Grehl, T. (author) / Mollers, R. (author) / Niehuis, E. (author) / Rading, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 1404-1407

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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