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    Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

    New search for: Zhou, Z.
    New search for: Cai, Z.
    New search for: Li, C.
    New search for: Lai, H.
    New search for: Chen, S.
    New search for: Yu, J.

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    Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

    New search for: Zhou, Z.
    New search for: Cai, Z.
    New search for: Li, C.
    New search for: Lai, H.
    New search for: Chen, S.
    New search for: Yu, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

    New search for: Zhou, Z.
    New search for: Cai, Z.
    New search for: Li, C.
    New search for: Lai, H.
    New search for: Chen, S.
    New search for: Yu, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

    Contributors:

    Zhou, Z. (author) / Cai, Z. (author) / Li, C. (author) / Lai, H. (author) / Chen, S. (author) / Yu, J. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 255 ; 2660-2664

    Publication date:

    2008-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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