Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer: Fid-Bau Portal

Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer

Lin, J. H. / Huang, S. J. / Su, Y. K. / Lai, C. H.

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Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer

Lin, J. H. / Huang, S. J. / Su, Y. K. / Lai, C. H.

Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer

Lin, J. H. / Huang, S. J. / Su, Y. K. / Lai, C. H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer

Contributors:

Lin, J. H. (author) / Huang, S. J. (author) / Su, Y. K. (author) / Lai, C. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 354 ; 148-154

Publication date:

2015-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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