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Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer
Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer
Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer
Lin, J. H. (author) / Huang, S. J. (author) / Su, Y. K. (author) / Lai, C. H. (author)
APPLIED SURFACE SCIENCE ; 354 ; 148-154
2015-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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