A platform for research: civil engineering, architecture and urbanism
High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates
High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates
High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates
Shang, J. Z. (author) / Zhang, B. P. (author) / Wu, C. M. (author) / Cai, L. E. (author) / Zhang, J. Y. (author) / Yu, J. Z. (author) / Wang, Q. M. (author)
APPLIED SURFACE SCIENCE ; 255 ; 3350-3353
2008-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Precipitates in GaN epilayers grown on sapphire substrates
British Library Online Contents | 1998
|Polarity control of GaN epilayers grown on ZnO templates
British Library Online Contents | 2003
|Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
British Library Online Contents | 1998
|Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
British Library Online Contents | 2004
|Orientation of cracks in AlGaN epilayers with sapphire substrates
British Library Online Contents | 2003
|