A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Bhandari, J. (author) / Vinet, M. (author) / Poiroux, T. (author) / Previtali, B. (author) / Vincent, B. (author) / Hutin, L. (author) / Barnes, J. P. (author) / Deleonibus, S. (author) / Ionescu, A. M. (author)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 114-117
2008-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Profiling N-Type Dopants in Silicon
| British Library Online Contents | 2010
Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
| British Library Online Contents | 2002
| British Library Online Contents | 2003
| British Library Online Contents | 2007
On the diffusion and activation of n-type dopants in Ge
| British Library Online Contents | 2012