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Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Bhandari, J. (author) / Vinet, M. (author) / Poiroux, T. (author) / Previtali, B. (author) / Vincent, B. (author) / Hutin, L. (author) / Barnes, J. P. (author) / Deleonibus, S. (author) / Ionescu, A. M. (author)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 114-117
2008-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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