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Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Bhandari, J. (Autor:in) / Vinet, M. (Autor:in) / Poiroux, T. (Autor:in) / Previtali, B. (Autor:in) / Vincent, B. (Autor:in) / Hutin, L. (Autor:in) / Barnes, J. P. (Autor:in) / Deleonibus, S. (Autor:in) / Ionescu, A. M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 114-117
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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