Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing: Fid-Bau Portal

Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Tanaka, Y. / Tanoue, H. / Arai, K.

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Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Tanaka, Y. / Tanoue, H. / Arai, K.

Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Tanaka, Y. / Tanoue, H. / Arai, K.

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Check availability in my library

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Document information

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Document information

Title:

Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Contributors:

Tanaka, Y. (author) / Tanoue, H. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 799-802

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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