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The effect of germanium doping on the evolution of defects in silicon

Londos, C. A. / Andrianakis, A. / Emtsev, V. V. / Oganesyan, G. A. / Ohyama, H.

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The effect of germanium doping on the evolution of defects in silicon

Londos, C. A. / Andrianakis, A. / Emtsev, V. V. / Oganesyan, G. A. / Ohyama, H.

The effect of germanium doping on the evolution of defects in silicon

Londos, C. A. / Andrianakis, A. / Emtsev, V. V. / Oganesyan, G. A. / Ohyama, H.

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Document information

Title:

The effect of germanium doping on the evolution of defects in silicon

Contributors:

Londos, C. A. (author) / Andrianakis, A. (author) / Emtsev, V. V. (author) / Oganesyan, G. A. (author) / Ohyama, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 133-136

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Phosphorous clustering in germanium-rich silicon germanium

Chroneos, A. / Bracht, H. / Grimes, R. W. et al. | British Library Online Contents | 2008

Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping

Yamada-Kaneta, H. / Kaneta, C. / Ogawa, T. | British Library Online Contents | 1993