A platform for research: civil engineering, architecture and urbanism
The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives
The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives
The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives
Manivannan, R. (author) / Ramanathan, S. (author)
APPLIED SURFACE SCIENCE ; 255 ; 3764-3768
2009-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Prediction of Material Removal in Polishing Free-Form Surfaces with Fixed Abrasives
British Library Online Contents | 2004
|On chemo-mechanical polishing (CMP) of silicon nitride (Si~3N~4) workmaterial with various abrasives
British Library Online Contents | 1998
|Chemical-mechanical polishing of copper and tantalum with silica abrasives
British Library Online Contents | 2001
|Evaluation of Agents Abrasives Polishing Porcelain Employing Image Processing
British Library Online Contents | 2014
|Development of a Polishing Disc Containing Granulated Fine Abrasives
British Library Online Contents | 2003
|