Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry: Fid-Bau Portal

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

Takaku, T. / Hijikata, Y. / Yaguchi, H. / Yoshida, S.

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Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

Takaku, T. / Hijikata, Y. / Yaguchi, H. / Yoshida, S.

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

Takaku, T. / Hijikata, Y. / Yaguchi, H. / Yoshida, S.

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Document information

Title:

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

Contributors:

Takaku, T. (author) / Hijikata, Y. (author) / Yaguchi, H. (author) / Yoshida, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 509-512

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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