Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction: Fid-Bau Portal

Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction

Ivanov, P.A. / Grekhov, I.V.

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Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction

Ivanov, P.A. / Grekhov, I.V.

Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction

Ivanov, P.A. / Grekhov, I.V.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction

Contributors:

Ivanov, P.A. (author) / Grekhov, I.V. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 955-958

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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