Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process: Fid-Bau Portal

Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

Kang, I.H. / Song, J.Y. / Joo, S.J. / Bahng, W. / Kim, S.C. / Kim, N.K.

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Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

Kang, I.H. / Song, J.Y. / Joo, S.J. / Bahng, W. / Kim, S.C. / Kim, N.K.

Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

Kang, I.H. / Song, J.Y. / Joo, S.J. / Bahng, W. / Kim, S.C. / Kim, N.K.

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Title:

Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

Contributors:

Kang, I.H. (author) / Song, J.Y. (author) / Joo, S.J. (author) / Bahng, W. (author) / Kim, S.C. (author) / Kim, N.K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 959-962

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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