A platform for research: civil engineering, architecture and urbanism
Silicon Carbide Vertical JFET Operating at High Temperature
Silicon Carbide Vertical JFET Operating at High Temperature
Silicon Carbide Vertical JFET Operating at High Temperature
Vassilevski, K.V. (author) / Hilton, K.P. (author) / Wright, N.G. (author) / Uren, M.J. (author) / Munday, A.G. (author) / Nikitina, I. (author) / Hydes, A.J. (author) / Horsfall, A.B. (author) / Johnson, C.M. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1063-1066
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts
British Library Online Contents | 2011
|A 600V Deep-Implanted Gate Vertical JFET
British Library Online Contents | 2004
|Demonstration of SiC Vertical Trench JFET Reliability
British Library Online Contents | 2012
|High Voltage SiC Vertical JFET for High Power RF Applications
British Library Online Contents | 2012
|A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET
British Library Online Contents | 2002
|