Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors: Fid-Bau Portal

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Shimizu, M. / Inada, M. / Yagi, S. / Nakajima, A. / Okumura, H. / Ubukata, A. / Yano, Y. / Akutsu, N.

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Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Shimizu, M. / Inada, M. / Yagi, S. / Nakajima, A. / Okumura, H. / Ubukata, A. / Yano, Y. / Akutsu, N.

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Shimizu, M. / Inada, M. / Yagi, S. / Nakajima, A. / Okumura, H. / Ubukata, A. / Yano, Y. / Akutsu, N.

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Check availability in my library

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Document information

Title:

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Contributors:

Shimizu, M. (author) / Inada, M. (author) / Yagi, S. (author) / Nakajima, A. (author) / Okumura, H. (author) / Ubukata, A. (author) / Yano, Y. (author) / Akutsu, N. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1329-1332

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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