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Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors
Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors
Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors
Maeda, N. (author) / Saitoh, T. (author) / Tsubaki, K. (author) / Nishida, T. (author) / Kobayashi, N. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 232 - 237
2001-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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