Injection of point defects during annealing of low energy As implanted silicon

Tsamis, C. / Skarlatos, D. / Valamontes, V. et al. | British Library Online Contents | 2005

High-temperature annealing behavior of ion-implanted spinel single crystals

Enescu, S. E. / Thome, L. / Gentils, A. et al. | British Library Online Contents | 2004

Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

Vines, L. / Monakhov, E. V. / Jensen, J. et al. | British Library Online Contents | 2009

Annealing behavior of luminescence from erbium-implanted GaN films

Zavada, J. M. / Ellis, C. J. / Lin, J. Y. et al. | British Library Online Contents | 2001

Observation of Diffusion Behavior in Al-Implanted ZnO Single Crystal

Nakagawa, T. / Sakaguchi, I. / Matsumoto, K. et al. | British Library Online Contents | 2010