A platform for research: civil engineering, architecture and urbanism
Injection of point defects during annealing of low energy As implanted silicon
Injection of point defects during annealing of low energy As implanted silicon
Injection of point defects during annealing of low energy As implanted silicon
Tsamis, C. (author) / Skarlatos, D. (author) / Valamontes, V. (author) / Tsoukalas, D. (author) / BenAssayag, G. (author) / Claverie, A. (author) / Lerch, W. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 261-265
2005-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Clustering of ultra-low-energy implanted boron in silicon during activation annealing
British Library Online Contents | 2000
|Interstitial injection during oxidation of very low energy nitrogen-implanted silicon
British Library Online Contents | 2005
|Defect annealing in ion implanted silicon carbide
British Library Online Contents | 1997
|Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal
British Library Online Contents | 2009
|British Library Online Contents | 2014
|