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    Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

    New search for: Vines, L.
    New search for: Monakhov, E. V.
    New search for: Jensen, J.
    New search for: Kuznetsov, A. Y.
    New search for: Svensson, B. G.

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    Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

    New search for: Vines, L.
    New search for: Monakhov, E. V.
    New search for: Jensen, J.
    New search for: Kuznetsov, A. Y.
    New search for: Svensson, B. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

    New search for: Vines, L.
    New search for: Monakhov, E. V.
    New search for: Jensen, J.
    New search for: Kuznetsov, A. Y.
    New search for: Svensson, B. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

    Contributors:

    Vines, L. (author) / Monakhov, E. V. (author) / Jensen, J. (author) / Kuznetsov, A. Y. (author) / Svensson, B. G. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 159-160 ; 177-181

    Publication date:

    2009-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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