Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions: Fid-Bau Portal

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

Katsuno, M. / Nakabayashi, M. / Fujimoto, T. / Ohtani, N. / Yashiro, H. / Tsuge, H. / Aigo, T. / Hoshino, T. / Tatsumi, K.

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Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

Katsuno, M. / Nakabayashi, M. / Fujimoto, T. / Ohtani, N. / Yashiro, H. / Tsuge, H. / Aigo, T. / Hoshino, T. / Tatsumi, K.

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

Katsuno, M. / Nakabayashi, M. / Fujimoto, T. / Ohtani, N. / Yashiro, H. / Tsuge, H. / Aigo, T. / Hoshino, T. / Tatsumi, K.

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Title:

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

Contributors:

Katsuno, M. (author) / Nakabayashi, M. (author) / Fujimoto, T. (author) / Ohtani, N. (author) / Yashiro, H. (author) / Tsuge, H. (author) / Aigo, T. (author) / Hoshino, T. (author) / Tatsumi, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 341-344

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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