Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates: Fid-Bau Portal

Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates

Zhang, M. / Hobgood, H. M. / Treu, M. / Pirouz, P.

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Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates

Zhang, M. / Hobgood, H. M. / Treu, M. / Pirouz, P.

Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates

Zhang, M. / Hobgood, H. M. / Treu, M. / Pirouz, P.

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Document information

Title:

Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates

Contributors:

Zhang, M. (author) / Hobgood, H. M. (author) / Treu, M. (author) / Pirouz, P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 759-762

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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