Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates: Fid-Bau Portal

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

Katsuno, M. / Ohtani, N. / Nakabayashi, M. / Fujimoto, T. / Yashiro, H. / Tsuge, H. / Aigo, T. / Hoshino, T. / Hirano, H. / Ohashi, W.

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Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

Katsuno, M. / Ohtani, N. / Nakabayashi, M. / Fujimoto, T. / Yashiro, H. / Tsuge, H. / Aigo, T. / Hoshino, T. / Hirano, H. / Ohashi, W.

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

Katsuno, M. / Ohtani, N. / Nakabayashi, M. / Fujimoto, T. / Yashiro, H. / Tsuge, H. / Aigo, T. / Hoshino, T. / Hirano, H. / Ohashi, W.

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Document information

Title:

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

Contributors:

Katsuno, M. (author) / Ohtani, N. (author) / Nakabayashi, M. (author) / Fujimoto, T. (author) / Yashiro, H. (author) / Tsuge, H. (author) / Aigo, T. (author) / Hoshino, T. (author) / Hirano, H. (author) / Ohashi, W. (author)

Published in:

Silicon Carbide and Related Materials 2009 ; 311-314

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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