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    Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

    New search for: Garces, N.Y.
    New search for: Glaser, E.R.
    New search for: Carlos, W.E.
    New search for: Fanton, M.A.

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    Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

    New search for: Garces, N.Y.
    New search for: Glaser, E.R.
    New search for: Carlos, W.E.
    New search for: Fanton, M.A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

    New search for: Garces, N.Y.
    New search for: Glaser, E.R.
    New search for: Carlos, W.E.
    New search for: Fanton, M.A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

    Contributors:

    Garces, N.Y. (author) / Glaser, E.R. (author) / Carlos, W.E. (author) / Fanton, M.A. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 389-392

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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