Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

    New search for: Rogdakis, K.
    New search for: Bescond, M.
    New search for: Bano, E.
    New search for: Zekentes, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

    New search for: Rogdakis, K.
    New search for: Bescond, M.
    New search for: Bano, E.
    New search for: Zekentes, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

    New search for: Rogdakis, K.
    New search for: Bescond, M.
    New search for: Bano, E.
    New search for: Zekentes, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

    Contributors:

    Rogdakis, K. (author) / Bescond, M. (author) / Bano, E. (author) / Zekentes, K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 579-582

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Fabrication of Si1-xGex alloy nanowire FETs

    Eun-Kyoung Jeon, / Han-Kyu Sung, / Jeong-O Lee, et al. | IEEE | 2006

    Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors

    Settino, Francesco / Crupi, Felice / Biswas, Subhajit et al. | British Library Online Contents | 2017

    Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

    Su, Meng / Yang, Zhenyu / Liao, Lei et al. | Wiley | 2016

    Free access

    Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors

    Settino, Francesco / Crupi, Felice / Biswas, Subhajit et al. | British Library Online Contents | 2017

    Ambipolar organic FETs

    British Library Online Contents | 2003

    Back to top