Morphology control and electron field emission properties of high-ordered Si nanoarrays fabricated by modified nanosphere lithography: Fid-Bau Portal

Morphology control and electron field emission properties of high-ordered Si nanoarrays fabricated by modified nanosphere lithography

Xu, L. / Li, W. / Xu, J. / Zhou, J. / Wu, L. / Zhang, X. G. / Ma, Z. / Chen, K.

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Morphology control and electron field emission properties of high-ordered Si nanoarrays fabricated by modified nanosphere lithography

Xu, L. / Li, W. / Xu, J. / Zhou, J. / Wu, L. / Zhang, X. G. / Ma, Z. / Chen, K.

Morphology control and electron field emission properties of high-ordered Si nanoarrays fabricated by modified nanosphere lithography

Xu, L. / Li, W. / Xu, J. / Zhou, J. / Wu, L. / Zhang, X. G. / Ma, Z. / Chen, K.

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Document information

Title:

Morphology control and electron field emission properties of high-ordered Si nanoarrays fabricated by modified nanosphere lithography

Contributors:

Xu, L. (author) / Li, W. (author) / Xu, J. (author) / Zhou, J. (author) / Wu, L. (author) / Zhang, X. G. (author) / Ma, Z. (author) / Chen, K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 5414-5417

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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