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Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

Xing, Y. / Han, J. / Deng, J. / Li, J. / Xu, C. / Shen, G.

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Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

Xing, Y. / Han, J. / Deng, J. / Li, J. / Xu, C. / Shen, G.

Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

Xing, Y. / Han, J. / Deng, J. / Li, J. / Xu, C. / Shen, G.

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Order at Subito €

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Document information

Title:

Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

Contributors:

Xing, Y. (author) / Han, J. (author) / Deng, J. (author) / Li, J. (author) / Xu, C. (author) / Shen, G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 6121-6124

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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