Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation: Fid-Bau Portal

Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

Emtsev, V. V. / Kozlovskii, V. V. / Misiuk, A. / Oganesyan, G. A. / Poloskin, D. S. / Sobolev, N. A. / Tropp, E. A.

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Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

Emtsev, V. V. / Kozlovskii, V. V. / Misiuk, A. / Oganesyan, G. A. / Poloskin, D. S. / Sobolev, N. A. / Tropp, E. A.

Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

Emtsev, V. V. / Kozlovskii, V. V. / Misiuk, A. / Oganesyan, G. A. / Poloskin, D. S. / Sobolev, N. A. / Tropp, E. A.

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Title:

Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

Contributors:

Emtsev, V. V. (author) / Kozlovskii, V. V. (author) / Misiuk, A. (author) / Oganesyan, G. A. (author) / Poloskin, D. S. (author) / Sobolev, N. A. (author) / Tropp, E. A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 159-160 ; 157-159

Publication date:

2009-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Kan, P. Y. / Abd El-Rahman, K. F. / Abdelgader, N. et al. | British Library Online Contents | 2001

Electrically Active Centers in Silicon Doped with Erbium

Emtsev, V. V. / Alexandrov, O. V. / Poloskin, D. S. et al. | British Library Online Contents | 1995

Structural defects and dislocation-related photoluminescence in erbium-implanted silicon

Sobolev, N. A. / Emel'yanov, A. M. / Shek, E. I. et al. | British Library Online Contents | 2002

Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

Misiuk, A. / Katcki, J. / Ratajczak, J. et al. | Springer Verlag | 2002

Annealing behavior of luminescence from erbium-implanted GaN films

Zavada, J. M. / Ellis, C. J. / Lin, J. Y. et al. | British Library Online Contents | 2001