Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

    New search for: Misiuk, A.
    New search for: Katcki, J.
    New search for: Ratajczak, J.
    New search for: Raineri, V.
    New search for: Bak-Misiuk, J.
    New search for: Gawlik, L.
    New search for: Bryja, L.
    New search for: Jun, J.

    Abstract The effect of heat treatment (up to 1570 K) under hydrostatic argon pressure (up to 1.2 GPa) on silicon implanted with helium and oxygen was investigated by transmission electron microscopy, X-ray diffraction and related methods. The treatment results in specific stress-related changes of Si/Si:He/Si and Si/Si:O/Si structures, especially in dislocation density. Such investigations can help in understanding the effect of stress at the layer/substrate interface during epitaxial growth and thermal treatment.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

    New search for: Misiuk, A.
    New search for: Katcki, J.
    New search for: Ratajczak, J.
    New search for: Raineri, V.
    New search for: Bak-Misiuk, J.
    New search for: Gawlik, L.
    New search for: Bryja, L.
    New search for: Jun, J.

    Abstract The effect of heat treatment (up to 1570 K) under hydrostatic argon pressure (up to 1.2 GPa) on silicon implanted with helium and oxygen was investigated by transmission electron microscopy, X-ray diffraction and related methods. The treatment results in specific stress-related changes of Si/Si:He/Si and Si/Si:O/Si structures, especially in dislocation density. Such investigations can help in understanding the effect of stress at the layer/substrate interface during epitaxial growth and thermal treatment.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

    New search for: Misiuk, A.
    New search for: Katcki, J.
    New search for: Ratajczak, J.
    New search for: Raineri, V.
    New search for: Bak-Misiuk, J.
    New search for: Gawlik, L.
    New search for: Bryja, L.
    New search for: Jun, J.

    Abstract The effect of heat treatment (up to 1570 K) under hydrostatic argon pressure (up to 1.2 GPa) on silicon implanted with helium and oxygen was investigated by transmission electron microscopy, X-ray diffraction and related methods. The treatment results in specific stress-related changes of Si/Si:He/Si and Si/Si:O/Si structures, especially in dislocation density. Such investigations can help in understanding the effect of stress at the layer/substrate interface during epitaxial growth and thermal treatment.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

    Contributors:

    Misiuk, A. (author) / Katcki, J. (author) / Ratajczak, J. (author) / Raineri, V. (author) / Bak-Misiuk, J. (author) / Gawlik, L. (author) / Bryja, L. (author) / Jun, J. (author)

    Published in:

    Atomistic Aspects of Epitaxial Growth ; 457-466

    NATO Science Series ; 65

    Publication date:

    2002-01-01

    Size:

    10 pages

    ISBN:

    978-94-010-0391-9 , 978-1-4020-0675-3

    ISSN:

    1568-2609

    DOI:

    https://doi.org/10.1007/978-94-010-0391-9_35

    Type of media:

    Article/Chapter (Book)

    Type of material:

    Electronic Resource

    Language:

    English

    Keywords:

    High Hydrostatic Pressure , Heteroepitaxial Structure , High Pressure Anneal , High Oxygen Dose , Interstitial Oxygen Concentration Physics , Physics, general , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Characterization and Evaluation of Materials , Physical Chemistry , Condensed Matter Physics

    Similar titles

    Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

    Misiuk, A. / Bak-Misiuk, J. / Antonova, I. V. et al. | British Library Online Contents | 2001

    Nanostructured Layers in High Temperature - Pressure Treated Silicon Implanted with Hydrogen / Helium

    Misiuk, A. / Bak-Misiuk, J. / Kaniewska, M. et al. | British Library Online Contents | 2002

    Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

    Emtsev, V. V. / Kozlovskii, V. V. / Misiuk, A. et al. | British Library Online Contents | 2009

    Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

    Rzodkiewicz, W. / Kudla, A. / Misiuk, A. et al. | British Library Online Contents | 2004

    Proton-implanted and helium-implanted silicon : low-temperature positron lifetime studies

    Mäkinen, S. / Rajainmäki, H. / Linderoth, S. | TIBKAT | 1990

    Back to top