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    Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

    New search for: Oliver, J.D.
    New search for: Ponczak, B.H.
    New search for: Parikh, R.P.
    New search for: Adomaitis, R.A.

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    Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

    New search for: Oliver, J.D.
    New search for: Ponczak, B.H.
    New search for: Parikh, R.P.
    New search for: Adomaitis, R.A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

    New search for: Oliver, J.D.
    New search for: Ponczak, B.H.
    New search for: Parikh, R.P.
    New search for: Adomaitis, R.A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

    Contributors:

    Oliver, J.D. (author) / Ponczak, B.H. (author) / Parikh, R.P. (author) / Adomaitis, R.A. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 101-104

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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