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    Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

    New search for: Oehlschlager, F.
    New search for: Juillaguet, S.
    New search for: Peyre, H.
    New search for: Camassel, J.
    New search for: Wellmann, P.J.

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    Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

    New search for: Oehlschlager, F.
    New search for: Juillaguet, S.
    New search for: Peyre, H.
    New search for: Camassel, J.
    New search for: Wellmann, P.J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

    New search for: Oehlschlager, F.
    New search for: Juillaguet, S.
    New search for: Peyre, H.
    New search for: Camassel, J.
    New search for: Wellmann, P.J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

    Contributors:

    Oehlschlager, F. (author) / Juillaguet, S. (author) / Peyre, H. (author) / Camassel, J. (author) / Wellmann, P.J. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 259-262

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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