Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography: Fid-Bau Portal

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Chen, Y. / Balaji, R. / Dudley, M. / Murthy, M. / Maximenko, S.I. / Freitas, J.A.

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Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Chen, Y. / Balaji, R. / Dudley, M. / Murthy, M. / Maximenko, S.I. / Freitas, J.A.

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Chen, Y. / Balaji, R. / Dudley, M. / Murthy, M. / Maximenko, S.I. / Freitas, J.A.

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Title:

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Contributors:

Chen, Y. (author) / Balaji, R. (author) / Dudley, M. (author) / Murthy, M. (author) / Maximenko, S.I. (author) / Freitas, J.A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 549-552

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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