Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes: Fid-Bau Portal

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes

Werber, D. / Wachutka, G.

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Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes

Werber, D. / Wachutka, G.

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes

Werber, D. / Wachutka, G.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes

Contributors:

Werber, D. (author) / Wachutka, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 267-270

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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