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    Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

    New search for: Cochrane, C.J.
    New search for: Lenahan, P.M.
    New search for: Lelis, A.J.

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    Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

    New search for: Cochrane, C.J.
    New search for: Lenahan, P.M.
    New search for: Lelis, A.J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

    New search for: Cochrane, C.J.
    New search for: Lenahan, P.M.
    New search for: Lelis, A.J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

    Contributors:

    Cochrane, C.J. (author) / Lenahan, P.M. (author) / Lelis, A.J. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 299-302

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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