Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination: Fid-Bau Portal

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Dautrich, M. S. / Lenahan, P. M. / Lelis, A. J.

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Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Dautrich, M. S. / Lenahan, P. M. / Lelis, A. J.

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Dautrich, M. S. / Lenahan, P. M. / Lelis, A. J.

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Check availability in my library

Order at Subito €

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Document information

Title:

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Contributors:

Dautrich, M. S. (author) / Lenahan, P. M. (author) / Lelis, A. J. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1011-1014

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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