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    Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

    New search for: Matsuura, H.
    New search for: Takahashi, M.
    New search for: Kagawa, Y.
    New search for: Tano, S.
    New search for: Miyake, T.

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    Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

    New search for: Matsuura, H.
    New search for: Takahashi, M.
    New search for: Kagawa, Y.
    New search for: Tano, S.
    New search for: Miyake, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

    New search for: Matsuura, H.
    New search for: Takahashi, M.
    New search for: Kagawa, Y.
    New search for: Tano, S.
    New search for: Miyake, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

    Contributors:

    Matsuura, H. (author) / Takahashi, M. (author) / Kagawa, Y. (author) / Tano, S. (author) / Miyake, T. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 385-388

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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