A platform for research: civil engineering, architecture and urbanism
Effects of Sacrificial Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Effects of Sacrificial Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Effects of Sacrificial Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Nishikawa, S. (author) / Okada, R. (author) / Matsuura, H. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 271-274
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2009
|Defects in High-Purity Semi-Insulating SiC
British Library Online Contents | 2004
|Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
British Library Online Contents | 2009
|British Library Online Contents | 2006
|British Library Online Contents | 2014
|