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C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al^+ Implanted JTE p^+n 4H-SiC Diodes
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al^+ Implanted JTE p^+n 4H-SiC Diodes
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al^+ Implanted JTE p^+n 4H-SiC Diodes
Fabbri, F. (author) / Moscatelli, F. (author) / Poggi, A. (author) / Nipoti, R. (author) / Cavallini, A. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 469-472
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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