Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al^+ Implanted JTE p^+n 4H-SiC Diodes
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al^+ Implanted JTE p^+n 4H-SiC Diodes
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al^+ Implanted JTE p^+n 4H-SiC Diodes
Fabbri, F. (Autor:in) / Moscatelli, F. (Autor:in) / Poggi, A. (Autor:in) / Nipoti, R. (Autor:in) / Cavallini, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 469-472
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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