Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC: Fid-Bau Portal

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Krishnan, B. / Kotamraju, S.P. / Melnychuk, G. / Merrett, N. / Koshka, Y.

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Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Krishnan, B. / Kotamraju, S.P. / Melnychuk, G. / Merrett, N. / Koshka, Y.

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Krishnan, B. / Kotamraju, S.P. / Melnychuk, G. / Merrett, N. / Koshka, Y.

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Document information

Title:

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Contributors:

Krishnan, B. (author) / Kotamraju, S.P. (author) / Melnychuk, G. (author) / Merrett, N. (author) / Koshka, Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 581-584

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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