Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Lin, H. D. / Melnychuk, G. / Wyatt, J. L. et al. | British Library Online Contents | 2007

Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

Krishnan, B. / Das, H. / Lin, H. D. et al. | British Library Online Contents | 2007

Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers

Soueidan, M. / Ferro, G. / Nsouli, B. et al. | British Library Online Contents | 2007

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Krishnan, B. / Kotamraju, S.P. / Melnychuk, G. et al. | British Library Online Contents | 2009

Doping and interface of homoepitaxial diamond for electronic applications

Yamasaki, S. / Gheeraert, E. / Koide, Y. | British Library Online Contents | 2014