Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses: Fid-Bau Portal

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Raynaud, C. / Nguyen, D.M. / Brosselard, P. / Perez-Tomas, A. / Planson, D. / Millan, J.

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Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Raynaud, C. / Nguyen, D.M. / Brosselard, P. / Perez-Tomas, A. / Planson, D. / Millan, J.

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Raynaud, C. / Nguyen, D.M. / Brosselard, P. / Perez-Tomas, A. / Planson, D. / Millan, J.

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Document information

Title:

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Contributors:

Raynaud, C. (author) / Nguyen, D.M. (author) / Brosselard, P. (author) / Perez-Tomas, A. (author) / Planson, D. (author) / Millan, J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 671-674

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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