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Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
Okamoto, M. (author) / Iijima, M. (author) / Nagano, T. (author) / Fukuda, K. (author) / Okumura, H. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 781-784
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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