Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut: Fid-Bau Portal

Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

Caban, P. / Kosciewicz, K. / Strupinski, W. / Szmidt, J. / Pagowska, K. / Ratajczak, R. / Wojcik, M. / Gaca, J. / Turos, A.

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Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

Caban, P. / Kosciewicz, K. / Strupinski, W. / Szmidt, J. / Pagowska, K. / Ratajczak, R. / Wojcik, M. / Gaca, J. / Turos, A.

Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

Caban, P. / Kosciewicz, K. / Strupinski, W. / Szmidt, J. / Pagowska, K. / Ratajczak, R. / Wojcik, M. / Gaca, J. / Turos, A.

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Title:

Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

Contributors:

Caban, P. (author) / Kosciewicz, K. (author) / Strupinski, W. (author) / Szmidt, J. (author) / Pagowska, K. (author) / Ratajczak, R. (author) / Wojcik, M. (author) / Gaca, J. (author) / Turos, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 939-942

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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