Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates: Fid-Bau Portal

Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates

Kuznetsov, N. I. / Mynbaeva, M. G. / Melnychuk, G. / Dmitriev, V. A. / Saddow, S. E.

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Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates

Kuznetsov, N. I. / Mynbaeva, M. G. / Melnychuk, G. / Dmitriev, V. A. / Saddow, S. E.

Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates

Kuznetsov, N. I. / Mynbaeva, M. G. / Melnychuk, G. / Dmitriev, V. A. / Saddow, S. E.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates

Contributors:

Kuznetsov, N. I. (author) / Mynbaeva, M. G. (author) / Melnychuk, G. (author) / Dmitriev, V. A. (author) / Saddow, S. E. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 483-486

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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