Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures: Fid-Bau Portal

Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures

Roccaforte, F. / Iucolano, F. / Giannazzo, F. / Moschetti, G. / Bongiorno, C. / Di Franco, S. / Puglisi, V. / Abbondanza, G. / Raineri, V.

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Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures

Roccaforte, F. / Iucolano, F. / Giannazzo, F. / Moschetti, G. / Bongiorno, C. / Di Franco, S. / Puglisi, V. / Abbondanza, G. / Raineri, V.

Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures

Roccaforte, F. / Iucolano, F. / Giannazzo, F. / Moschetti, G. / Bongiorno, C. / Di Franco, S. / Puglisi, V. / Abbondanza, G. / Raineri, V.

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Document information

Title:

Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures

Contributors:

Roccaforte, F. (author) / Iucolano, F. (author) / Giannazzo, F. (author) / Moschetti, G. (author) / Bongiorno, C. (author) / Di Franco, S. (author) / Puglisi, V. (author) / Abbondanza, G. (author) / Raineri, V. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 967-970

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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