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Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

Lee, S. Y. / Kim, H. K. / Kim, J. H. / Roh, J. S. / Choi, D. J.

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Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

Lee, S. Y. / Kim, H. K. / Kim, J. H. / Roh, J. S. / Choi, D. J.

Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

Lee, S. Y. / Kim, H. K. / Kim, J. H. / Roh, J. S. / Choi, D. J.

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Check availability in my library

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Document information

Title:

Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

Contributors:

Lee, S. Y. (author) / Kim, H. K. (author) / Kim, J. H. (author) / Roh, J. S. (author) / Choi, D. J. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 44 ; 4354-4359

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Forschungszentrum Deutscher Sprachatlas | DataCite | 1876

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