Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics: Fid-Bau Portal

Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

Pan, T. M. / Yen, L. C. / Su, S. H.

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Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

Pan, T. M. / Yen, L. C. / Su, S. H.

Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

Pan, T. M. / Yen, L. C. / Su, S. H.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

Contributors:

Pan, T. M. (author) / Yen, L. C. (author) / Su, S. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 256 ; 1534-1537

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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